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1

[IEEE 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) - Grenoble, France (2019.4.1-2019.4.3)] 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) - Comparison of leakage currents in the power supply bulk and SOI transistors: calculations and experiment

Ilnitsky, Mikhail, Vdovin, Vladimir, Egorkin, Andrey, Antonov, Valentin, Tyschenko, Ida, Zarubanov, Alexander, Popov, Vladimir, Glukhov, Alexander

Année:

2019

Langue:

english

Fichier:

PDF, 2.82 MB

english, 2019

2

Luminescence Properties of Oxygen-Containing Silicon Annealed at Enhanced Argon Pressure

A. Misiuk, B. Surma, B. Surma, L. Rebohle, J. Jun, I. V. Antonova, I. Tyschenko, A. Romano-Rodriguez, M. Lopez

Journal:

physica status solidi (b)

Année:

1999

Langue:

english

Fichier:

PDF, 160 KB

english, 1999

3

Strong Blue and Violet Photo- and Electroluminescence from Ge- and Si-Implanted Silicon Dioxide

L. Rebohle, J. von Borany, R. Grötzschel, A. Markwitz, B. Schmidt, I. E. Tyschenko, W. Skoruba, H. Fröb, K. Leo

Journal:

physica status solidi (a)

Année:

1998

Langue:

english

Fichier:

PDF, 180 KB

english, 1998

4

Biochemical evidence for viral-like characteristics in cerebrospinal fluids of brain tumor patients

W. Cuatico, R. Woldron Jr., W. Tyschenko

Journal:

Année:

1977

Langue:

english

Fichier:

PDF, 448 KB

english, 1977

5

Endotaxial growth of InSb nanocrystals at the bonding interface of the In+ and Sb+ ion implanted SOI structure

I.E. Tyschenko, M. Voelskow, A.G. Cherkov, V.P. Popov

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

2009

Langue:

english

Fichier:

PDF, 553 KB

english, 2009

6

Phase diagram of the Al2O3–HfO2–Y2O3 system

S.M. Lakiza, Ja.S. Tyschenko, L.M. Lopato

Journal:

Journal of the European Ceramic Society

Année:

2011

Langue:

english

Fichier:

PDF, 744 KB

english, 2011

7

Photoluminescence and electroluminescence investigations at Ge-rich SiO2 layers

L Rebohle, J von Borany, W Skorupa, I.E Tyschenko, H Fröb

Journal:

Journal of Luminescence

Année:

1998

Langue:

english

Fichier:

PDF, 108 KB

english, 1998

8

The effect of annealing under hydrostatic pressure on the visible photoluminescence from si+-ion implanted SiO2 films

I.E Tyschenko, L Rebohle, R.A Yankov, W Skorupa, A Misiuk, G.A Kachurin

Journal:

Journal of Luminescence

Année:

1998

Langue:

english

Fichier:

PDF, 119 KB

english, 1998

9

Blue and violet photoluminescence from high-dose Si+- and Ge+-implanted silicon dioxide layers

L. Rebohle, I.E. Tyschenko, H. Fröb, K. Leo, R.A. Yankov, J. von Borany, G.A. Kachurin, W. Skorupa

Journal:

Microelectronic Engineering

Année:

1997

Langue:

english

Fichier:

PDF, 320 KB

english, 1997

10

Enhancement of the intensity of violet and green photoluminescence from Ge+ ion-implanted SiOxNy films caused by hydrostatic pressure during annealing

I.E. Tyschenko, K.S. Zhuravlev, E.N. Vandyshev, A. Misiuk, L. Rebohle, W. Skorupa, R.A. Yankov, V.P. Popov

Journal:

Optical Materials

Année:

2001

Langue:

english

Fichier:

PDF, 97 KB

english, 2001

11

Real-time ellipsometric study of Ge+ ion implanted SiO2 layers during fast annealing

V. A. Shvets, I. E. Tyschenko, S. I. Chikichev, V. Yu. Prokopiev

Journal:

physica status solidi (c)

Année:

2008

Langue:

english

Fichier:

PDF, 181 KB

english, 2008

12

The properties of the nanometer thick Si/Ge films-on-insulator produced by Ge+ ion implantation and subsequent hydrogen transfer

I. E. Tyschenko, M. Voelskow, A. G. Cherkov, V. P. Popov

Journal:

physica status solidi (c)

Année:

2008

Langue:

english

Fichier:

PDF, 247 KB

english, 2008

13

Nanometer-thick SGOI structures produced by Ge+ ion implantation of SiO2 films and subsequent hydrogen transfer of Si layers

I.E. Tyschenko, M. Voelskow, A.G. Cherkov, V.P. Popov

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

2009

Langue:

english

Fichier:

PDF, 481 KB

english, 2009

14

Optical transitions in Ge nanocrystals formed by high-pressure annealing of Ge+ ion implanted SiO2 films

I.E. Tyschenko, A.B. Talochkin, A.G. Cherkov, K.S. Zhuravlev, R.A. Yankov

Journal:

Solid State Communications

Année:

2004

Langue:

english

Fichier:

PDF, 456 KB

english, 2004

15

Current status of the Antarctic herb tundra formation in the Central Argentine Islands

I. PARNIKOZA, P. CONVEY, I. DYKYY, V. TROKHYMETS, G. MILINEVSKY, O. TYSCHENKO, D. INOZEMTSEVA, I. KOZERETSKA

Journal:

Global Change Biology

Année:

2009

Langue:

english

Fichier:

PDF, 227 KB

english, 2009

16

Short-wavelength photoluminescence of SiO2layers implanted with high doses of Si+, Ge+, and Ar+ions

G. A. Kachurin, I. E. Tyschenko, L. Rebohle, W. Skorupa, R. A. Yankov, H. Froeb, T. Boehme, K. Leo

Journal:

Année:

1998

Langue:

english

Fichier:

PDF, 97 KB

english, 1998

17

Effect of ion dose and annealing mode on photoluminescence from SiO2implanted with Si ions

G. A. Kachurin, A. F. Leier, K. S. Zhuravlev, I. E. Tyschenko, A. K. Gutakovskii, V. A. Volodin, W. Skorupa, R. A. Yankov

Journal:

Année:

1998

Langue:

english

Fichier:

PDF, 823 KB

english, 1998

18

Photoluminescence of Si3N4films implanted with Ge+and Ar+ions

I. E. Tyschenko, V. A. Volodin, L. Rebohle, M. Voelskov, V. Skorupa

Journal:

Année:

1999

Langue:

english

Fichier:

PDF, 132 KB

english, 1999

19

Formation of photoluminescence centers during annealing of SiO2layers implanted with Ge ions

G. A. Kachurin, L. Rebohle, I. E. Tyschenko, V. A. Volodin, M. Voelskow, W. Skorupa, H. Froeb

Journal:

Année:

2000

Langue:

english

Fichier:

PDF, 90 KB

english, 2000

20

Study of photoluminescence of SiOxNyfilms implanted with Ge+ions and annealed under the conditions of hydrostatic pressure

I. E. Tyschenko, K. S. Zhuravlev, E. N. Vandyshev, A. Misiuk, R. A. Yankov, L. Rebohle, W. Skorupa

Journal:

Année:

2001

Langue:

english

Fichier:

PDF, 146 KB

english, 2001

21

Properties of Ge nanocrystals formed by implantation of Ge+ions into SiO2films with subsequent annealing under hydrostatic pressure

I. E. Tyschenko, A. B. Talochkin, A. G. Cherkov, K. S. Zhuravlev, A. Misiuk, M. Voelskow, W. Skorupa

Journal:

Année:

2003

Langue:

english

Fichier:

PDF, 94 KB

english, 2003

22

Formation of nanocrystalline silicon films using high-dose H+ion implantation into silicon-on-insulator layers with subsequent rapid thermal annealing

I. E. Tyschenko, V. P. Popov, A. B. Talochkin, A. K. Gutakovskii, K. S. Zhuravlev

Journal:

Année:

2004

Langue:

english

Fichier:

PDF, 143 KB

english, 2004

23

Radiative recombination in Ge+-implanted SiO2films annealed under hydrostatic pressure

I. E. Tyschenko, L. Rebohle

Journal:

Année:

2004

Langue:

english

Fichier:

PDF, 91 KB

english, 2004

24

Special features of photoluminescence in silicon-on-insulator structures implanted with hydrogen ions

I. E. Tyschenko, K. S. Zhuravlev, A. B. Talochkin, V. P. Popov

Journal:

Année:

2006

Langue:

english

Fichier:

PDF, 204 KB

english, 2006

25

Behavior of germanium ion-implanted into SiO2near the bonding interface of a silicon-on-insulator structure

I. E. Tyschenko, M. Voelskow, A. G. Cherkov, V. P. Popov

Journal:

Année:

2007

Langue:

english

Fichier:

PDF, 213 KB

english, 2007

26

Growth and electrical properties of the (Si/Ge)-on-insulator structures formed by ion implantation and subsequent hydrogen-assisted transfer

I. E. Tyschenko, M. Voelskow, A. G. Cherkov, V. P. Popov

Journal:

Année:

2009

Langue:

english

Fichier:

PDF, 269 KB

english, 2009

27

Silicon-on-insulator structures with a nitrogenated buried SiO2layer: Preparation and properties

I. E. Tyschenko, V. P. Popov

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 238 KB

english, 2011

28

Anodization of nanoscale Si layers in silicon-on-insulator structures

V. A. Antonov, E. V. Spesivtsev, I. E. Tyschenko

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 190 KB

english, 2011

29

Crystallization of hydrogenated amorphous-nanocrystalline silicon films under high-pressure annealing

Ida Tyschenko, Vladimir Volodin, Andrzej Misiuk

Journal:

physica status solidi (c)

Année:

2012

Langue:

english

Fichier:

PDF, 282 KB

english, 2012

30

High-temperature phosphorus ion doping of silicon

G.A. Kachurin, I.E. Tyschenko, A.P. Mazhirin, E. Wieser

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

1989

Langue:

english

Fichier:

PDF, 426 KB

english, 1989

31

Centers of spin-dependent recombination in structures formed by N+ ion implantation into Si

A.A. Karanovich, A.V. Dvurechenskii, I.E. Tyschenko, G.A. Kachurin

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

1991

Langue:

english

Fichier:

PDF, 331 KB

english, 1991

32

High-temperature ion implantation in silicon

G.A. Kachurin, I.E. Tyschenko, L.I. Fedina

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

1992

Langue:

english

Fichier:

PDF, 616 KB

english, 1992

33

Roles of implantation temperature and ion dose rate in ion-beam synthesis of buried Si3N3 layers

G.A. Kachurin, V.D. Akhmetov, I.E. Tyschenko, A.E. Plotnikov

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

1993

Langue:

english

Fichier:

PDF, 1.15 MB

english, 1993

34

Radiative recombination in silicon-on-insulator layers implanted with high dose of H+ ions

I.E. Tyschenko, V.A. Volodin, V.P. Popov

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

2012

Langue:

english

Fichier:

PDF, 318 KB

english, 2012

35

Properties of silicon oversaturated with implanted hydrogen

V.P Popov, I.E Tyschenko, L.N Safronov, O.V Naumova, I.V Antonova, A.K Gutakovsky, A.B Talochkin

Journal:

Thin Solid Films

Année:

2002

Langue:

english

Fichier:

PDF, 684 KB

english, 2002

36

Raman and photoluminescence investigations of the H+ ion implanted silicon-on-insulator structure formed by hydrogen ion cut

I.E Tyschenko, A.B Talochkin, B.A Kolesov, K.S Zhuravlev, V.I Obodnikov, V.P Popov

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

2002

Langue:

english

Fichier:

PDF, 240 KB

english, 2002

37

A study of the blue photoluminescence emission from thermally-grown, Si+-implanted SiO2 films after short-time annealing

W. Skorupa, R.A. Yankov, L. Rebohle, H. Fröb, T. Böhme, K. Leo, I.E. Tyschenko, G.A. Kachurin

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

1996

Langue:

english

Fichier:

PDF, 390 KB

english, 1996

38

Visible and near-infrared luminescence from silicon nanostructures formed by ion implantation and pulse annealing

G.A. Kachurin, I.E. Tyschenko, K.S. Zhuravlev, N.A. Pazdnikov, V.A. Volodin, A.K. Gutakovsky, A.F. Leier, W. Skorupa, R.A. Yankov

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

1997

Langue:

english

Fichier:

PDF, 332 KB

english, 1997

39

Annealing effects in light-emitting Si nanostructures formed in SiO2 by ion implantation and transient preheating

G.A. Kachurin, K.S. Zhuravlev, N.A. Pazdnikov, A.F. Leier, I.E. Tyschenko, V.A. Volodin, W. Skorupa, R.A. Yankov

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

1997

Langue:

english

Fichier:

PDF, 428 KB

english, 1997

40

Out-diffusion of hydrogen from hydrogen plasma-processed oxygen-implanted silicon

A. Misiuk, J. Bak-Misiuk, A. Barcz, P. Romanowski, I. Tyschenko, A. Ulyashin, M. Prujszczyk

Journal:

Applied Surface Science

Année:

2012

Langue:

english

Fichier:

PDF, 576 KB

english, 2012

41

Phase Diagram of the Al2O3–HfO2–Er2O3 System

Jana S. Tyschenko, Sergij M. Lakiza, Lydia M. Lopato

Journal:

Journal of the American Ceramic Society

Année:

2012

Langue:

english

Fichier:

PDF, 1.23 MB

english, 2012

42

Wavelength-selective enhancement of the intensity of visible photoluminescence in hydrogen-ion-implanted silicon-on-insulator structures annealed under high pressure

Tyschenko, I. E., Zhuravlev, K. S., Cherkov, A. G., Popov, V. P., Misiuk, A., Yankov, R. A.

Journal:

Applied Physics Letters

Année:

2006

Langue:

english

Fichier:

PDF, 411 KB

english, 2006

43

Crystallization of InSb Phase Near the Bonding Interface of Silicon-on-Insulator Structure

Tyschenko, I.E., Cherkov, A.G., Voelskow, M., Popov, V.P.

Journal:

Solid State Phenomena

Année:

2008

Langue:

english

Fichier:

PDF, 1.99 MB

english, 2008

44

Development of Antarctic herb tundra vegetation near Arctowski station, King George Island

I.A. Kozeretska, I.Yu. Parnikoza, O. Mustafa, O.V. Tyschenko, S.G. Korsun, P. Convey

Journal:

Année:

2010

Langue:

english

Fichier:

PDF, 483 KB

english, 2010

45

Crystallization induced by thermal annealing with millisecond pulses in silicon-on-insulator films implanted with high doses of hydrogen ions

I. E. Tyschenko, V. A. Volodin, M. Voelskow, A. G. Cherkov, V. P. Popov

Journal:

Année:

2013

Langue:

english

Fichier:

PDF, 379 KB

english, 2013

46

Quantum-confinement effect in silicon-on-insulator films implanted with high doses of hydrogen ions

I. E. Tyschenko, V. A. Volodin

Journal:

Année:

2012

Langue:

english

Fichier:

PDF, 293 KB

english, 2012

47

Enhancement of the intensity of the short-wavelength visible photoluminescence from silicon-implanted silicon-dioxide films caused by hydrostatic pressure during annealing

Tyschenko, I. E., Rebohle, L., Yankov, R. A., Skorupa, W., Misiuk, A.

Journal:

Applied Physics Letters

Année:

1998

Langue:

english

Fichier:

PDF, 252 KB

english, 1998

48

Effect of hydrostatic pressure during the annealing of silicon-on-insulator films implanted with a high hydrogen-ion dose

Tyschenko, I. E., Volodin, V. A., Kozlovski, V. V., Popov, V. P.

Journal:

Année:

2014

Langue:

english

Fichier:

PDF, 244 KB

english, 2014

49

Ion-beam synthesis of InSb nanocrystals in the buried SiO2layer of a silicon-on-insulator structure

I. E. Tyschenko,M. Voelskow,A. G. Cherkov,V. P. Popov

Journal:

Année:

2014

Langue:

english

Fichier:

PDF, 1.02 MB

english, 2014

50

Formation of a resonant microcavity in hydrogen ion-implanted silicon-on-insulator structures

I. E. Tyschenko, A. B. Talochkin, E. M. Bagaev, A. G. Cherkov, V. P. Popov, A. Misiuk, R. A. Yankov

Année:

2007

Langue:

english

Fichier:

PDF, 1.05 MB

english, 2007